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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1400 DESCRIPTION *With TO-220Fa package *High DC current gain *Low collector saturation voltage *DARLINGTON APPLICATIONS *For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -7 -6 -10 2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1400 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=-25mA; RBE= IC=-100A; IE=0 IE=-50mA; IC=0 IC=-3A ;IB=-6mA B MIN -120 -120 -7 TYP. MAX UNIT V V V -1.5 -3.0 -2.0 -3.5 -10 -10 1000 20000 V V V V A A IC=-6A ;IB=-60mA B IC=-3A ;IB=-6mA B IC=-6A ;IB=-60mA B VCB=-100V; IE=0 VCE=-100V; RBE= IC=-3A ; VCE=-3V 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1400 Fig.2 Outline dimensions (unindicated tolerance: 0.15 mm) 3 |
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